Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/98142
DC FieldValue
dc.titleSurface states of GaP (110)
dc.contributor.authorOng, C.K.
dc.contributor.authorLow, K.C.
dc.date.accessioned2014-10-16T09:43:30Z
dc.date.available2014-10-16T09:43:30Z
dc.date.issued1991
dc.identifier.citationOng, C.K.,Low, K.C. (1991). Surface states of GaP (110). Journal of Physics and Chemistry of Solids 52 (5) : 705-708. ScholarBank@NUS Repository.
dc.identifier.issn00223697
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98142
dc.description.abstractChadi's tight-binding total energy algorithm was used to study the reconstruction of the GaP (110) surface and its intrinsic occupied and unoccupied states. Assuming a rotation-relaxation model, the optimal surface atomic geometry was obtained by minimizing the total energy of the system. The angle of rotation obtained, ω = 22°, is near the experimental value of 27.5°. The features of the surface electronic states were determined and described. The calculated intrinsic occupied surface states are in excellent agreement with the experimental data and those for the unoccupied states are about 30% higher than the results of inverse photo-emission experiments. © 1991.
dc.sourceScopus
dc.subjectGaP
dc.subjectsemiconductor surface
dc.subjectSurface states
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.sourcetitleJournal of Physics and Chemistry of Solids
dc.description.volume52
dc.description.issue5
dc.description.page705-708
dc.description.codenJPCSA
dc.identifier.isiutNOT_IN_WOS
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