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Title: Surface diffusion of a Si adatom on a Si(100) surface
Authors: Ong, C.K. 
Keywords: diffusion
Semiconductor surface
Issue Date: Feb-1993
Citation: Ong, C.K. (1993-02). Surface diffusion of a Si adatom on a Si(100) surface. Journal of Physics and Chemistry of Solids 54 (2) : 183-185. ScholarBank@NUS Repository.
Abstract: The various binding sites and saddle points for an adatom on the Si(100)-2 × 1 symmetrical reconstructed surface are obtained by using a self-consistent semi-empirical method. This is done by minimizing the total energy at each selected position on the surface with respect to the adatom height and the positions of its nearest neighbour atoms. The diffusion of an adatom on the surface is found to be anisotropic. The preferred motion is along a zigzag path parallel to the dimer rows with an activation energy of ~0.63 eV. This value is consistent with earlier theoretical calculations and experimental estimates. © 1993.
Source Title: Journal of Physics and Chemistry of Solids
ISSN: 00223697
Appears in Collections:Staff Publications

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