Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/98127
DC Field | Value | |
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dc.title | Surface chemical states on LPCVD-grown 4H-SiC epilayers | |
dc.contributor.author | Wee, A.T.S. | |
dc.contributor.author | Li, K. | |
dc.contributor.author | Tin, C.C. | |
dc.date.accessioned | 2014-10-16T09:43:20Z | |
dc.date.available | 2014-10-16T09:43:20Z | |
dc.date.issued | 1998-04 | |
dc.identifier.citation | Wee, A.T.S.,Li, K.,Tin, C.C. (1998-04). Surface chemical states on LPCVD-grown 4H-SiC epilayers. Applied Surface Science 126 (1-2) : 34-42. ScholarBank@NUS Repository. | |
dc.identifier.issn | 01694332 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/98127 | |
dc.description.abstract | A series of 4H-silicon carbide (SiC) epilayers grown on 4H-SiC substrates by low pressure chemical vapor deposition (LPCVD) with different silane (SiH4) to propane (C3H8) gas flow ratios were studied by angle resolved X-ray photoelectron spectroscopy (ARXPS) and atomic force microscopy (AFM). ARXPS revealed that the surfaces of the samples consisted of elemental Si, Si oxides (SiO2 and SiOx where x < 2) and unreacted C-H species, in addition to the stoichiometric SiC compound. Small amounts of elemental Si were also detected within the 4H-SiC epilayers. The surface thickness of the C-H overlayer showed a positive correlation with the C3H8 source flow, and comprised largely of unreacted C3H8 or its intermediate products such as C2H2 and C2H4. This C-H overlayer had an rms roughness of 0.4 ± 0.1 nm as determined by AFM. The roughness was independent of the Si:C source ratio. AFM analyses revealed numerous micro-scratches which were the polishing marks on the 4H-SiC substrate copied by the epilayers. © 1998 Elsevier Science B.V. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.description.sourcetitle | Applied Surface Science | |
dc.description.volume | 126 | |
dc.description.issue | 1-2 | |
dc.description.page | 34-42 | |
dc.description.coden | ASUSE | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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