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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/98126
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dc.titleSurface chemical states on 3C-SiC/Si epilayers
dc.contributor.authorWee, A.T.S.
dc.contributor.authorFeng, Z.C.
dc.contributor.authorHng, H.H.
dc.contributor.authorTan, K.L.
dc.contributor.authorTin, C.C.
dc.contributor.authorHu, R.
dc.contributor.authorCoston, R.
dc.date.accessioned2014-10-16T09:43:20Z
dc.date.available2014-10-16T09:43:20Z
dc.date.issued1994-12-01
dc.identifier.citationWee, A.T.S.,Feng, Z.C.,Hng, H.H.,Tan, K.L.,Tin, C.C.,Hu, R.,Coston, R. (1994-12-01). Surface chemical states on 3C-SiC/Si epilayers. Applied Surface Science 81 (4) : 377-385. ScholarBank@NUS Repository.
dc.identifier.issn01694332
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98126
dc.description.abstractA series of 3C-SiC/Si(100) films grown by chemical vapour deposition (CVD) with different growth times and hence film thicknesses, are studied by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). XPS showed that the surfaces of the samples consist of Si oxides (SiO2 and SiO2 where x
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.sourcetitleApplied Surface Science
dc.description.volume81
dc.description.issue4
dc.description.page377-385
dc.description.codenASUSE
dc.identifier.isiutNOT_IN_WOS
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