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|Title:||Surface chemical states on 3C-SiC/Si epilayers||Authors:||Wee, A.T.S.
|Issue Date:||1-Dec-1994||Citation:||Wee, A.T.S.,Feng, Z.C.,Hng, H.H.,Tan, K.L.,Tin, C.C.,Hu, R.,Coston, R. (1994-12-01). Surface chemical states on 3C-SiC/Si epilayers. Applied Surface Science 81 (4) : 377-385. ScholarBank@NUS Repository.||Abstract:||A series of 3C-SiC/Si(100) films grown by chemical vapour deposition (CVD) with different growth times and hence film thicknesses, are studied by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). XPS showed that the surfaces of the samples consist of Si oxides (SiO2 and SiO2 where x||Source Title:||Applied Surface Science||URI:||http://scholarbank.nus.edu.sg/handle/10635/98126||ISSN:||01694332|
|Appears in Collections:||Staff Publications|
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