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Title: Surface chemical states on 3C-SiC/Si epilayers
Authors: Wee, A.T.S. 
Feng, Z.C. 
Hng, H.H.
Tan, K.L. 
Tin, C.C.
Hu, R.
Coston, R.
Issue Date: 1-Dec-1994
Citation: Wee, A.T.S.,Feng, Z.C.,Hng, H.H.,Tan, K.L.,Tin, C.C.,Hu, R.,Coston, R. (1994-12-01). Surface chemical states on 3C-SiC/Si epilayers. Applied Surface Science 81 (4) : 377-385. ScholarBank@NUS Repository.
Abstract: A series of 3C-SiC/Si(100) films grown by chemical vapour deposition (CVD) with different growth times and hence film thicknesses, are studied by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). XPS showed that the surfaces of the samples consist of Si oxides (SiO2 and SiO2 where x
Source Title: Applied Surface Science
ISSN: 01694332
Appears in Collections:Staff Publications

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