Please use this identifier to cite or link to this item: https://doi.org/10.1088/0022-3727/27/9/024
DC FieldValue
dc.titleSurface and optical analyses of porous silicon membranes
dc.contributor.authorFeng, Z.C.
dc.contributor.authorWee, A.T.S.
dc.contributor.authorTan, K.L.
dc.date.accessioned2014-10-16T09:43:18Z
dc.date.available2014-10-16T09:43:18Z
dc.date.issued1994
dc.identifier.citationFeng, Z.C., Wee, A.T.S., Tan, K.L. (1994). Surface and optical analyses of porous silicon membranes. Journal of Physics D: Applied Physics 27 (9) : 1968-1975. ScholarBank@NUS Repository. https://doi.org/10.1088/0022-3727/27/9/024
dc.identifier.issn00223727
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98124
dc.description.abstractSurface and optical analytical techniques of x-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Fourier transform infrared transmission, photoluminescence and Raman scattering have been used to study porous Si membranes with visible light emission. The main components of surface layers were found to be SiO2 plus Si clusters and some contamination elements. The depth distributions of these impurities over the entire 200 μm thick membrane were also profiled. Porous Si membranes show a large number of infrared active modes due to the oxidized and organized surfaces of the pores. Their Raman features are markedly distinct from that of crystalline, microcrystalline and amorphous Si. Their anomalous Raman temperature behaviour is explained by the quantum wire model and strain effects. The combination of surface and optical analyses offers better understanding for the properties of porous Si.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1088/0022-3727/27/9/024
dc.description.sourcetitleJournal of Physics D: Applied Physics
dc.description.volume27
dc.description.issue9
dc.description.page1968-1975
dc.description.codenJPAPB
dc.identifier.isiutA1994PH52300024
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