Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/98123
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dc.titleSurface and interface studies of titanium silicide formation
dc.contributor.authorWee, A.T.S.
dc.contributor.authorHuan, A.C.H.
dc.contributor.authorOsipowicz, T.
dc.contributor.authorLee, K.K.
dc.contributor.authorThian, W.H.
dc.contributor.authorTan, K.L.
dc.contributor.authorHogan, R.
dc.date.accessioned2014-10-16T09:43:18Z
dc.date.available2014-10-16T09:43:18Z
dc.date.issued1996-09-01
dc.identifier.citationWee, A.T.S.,Huan, A.C.H.,Osipowicz, T.,Lee, K.K.,Thian, W.H.,Tan, K.L.,Hogan, R. (1996-09-01). Surface and interface studies of titanium silicide formation. Thin Solid Films 283 (1-2) : 130-134. ScholarBank@NUS Repository.
dc.identifier.issn00406090
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98123
dc.description.abstractSecondary ion mass spectrometry (SIMS), Rutherford backscattering spectroscopy (RBS) and X-ray photoelectron spectroscopy (XPS) are used to investigate Ti suicide formation mechanisms on a series of Ti on Si thin-films annealed in ultrahigh vacuum (UHV) at different temperatures and durations. The competition between oxygen diffusion and the suicide formation reaction (the so-called 'snowplough' effect) is observed directly, as well as a Ti-Si-O layer. The results from these controlled experiments are compared with those from Ti-silicide films formed under rapid thermal annealing (RTA) conditions in a production furnace, with and without a TiW barrier layer. The TiW layer is shown to act as an effective barrier to silicon and oxygen out-diffusion, as well as the incorporation of ambient gases.
dc.sourceScopus
dc.subjectRutherford backscattering spectroscopy; secondary ion mass spectrometry (SIMS)
dc.subjectSilicides
dc.subjectTitanium
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.sourcetitleThin Solid Films
dc.description.volume283
dc.description.issue1-2
dc.description.page130-134
dc.description.codenTHSFA
dc.identifier.isiutNOT_IN_WOS
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