Please use this identifier to cite or link to this item:
Title: Surface and interface studies of titanium silicide formation
Authors: Wee, A.T.S. 
Huan, A.C.H. 
Osipowicz, T. 
Lee, K.K.
Thian, W.H.
Tan, K.L. 
Hogan, R.
Keywords: Rutherford backscattering spectroscopy; secondary ion mass spectrometry (SIMS)
Issue Date: 1-Sep-1996
Citation: Wee, A.T.S.,Huan, A.C.H.,Osipowicz, T.,Lee, K.K.,Thian, W.H.,Tan, K.L.,Hogan, R. (1996-09-01). Surface and interface studies of titanium silicide formation. Thin Solid Films 283 (1-2) : 130-134. ScholarBank@NUS Repository.
Abstract: Secondary ion mass spectrometry (SIMS), Rutherford backscattering spectroscopy (RBS) and X-ray photoelectron spectroscopy (XPS) are used to investigate Ti suicide formation mechanisms on a series of Ti on Si thin-films annealed in ultrahigh vacuum (UHV) at different temperatures and durations. The competition between oxygen diffusion and the suicide formation reaction (the so-called 'snowplough' effect) is observed directly, as well as a Ti-Si-O layer. The results from these controlled experiments are compared with those from Ti-silicide films formed under rapid thermal annealing (RTA) conditions in a production furnace, with and without a TiW barrier layer. The TiW layer is shown to act as an effective barrier to silicon and oxygen out-diffusion, as well as the incorporation of ambient gases.
Source Title: Thin Solid Films
ISSN: 00406090
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

checked on Jun 14, 2019

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.