Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4747487
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dc.titleSolid phase epitaxy of ultra-shallow Sn implanted Si observed using high-resolution Rutherford backscattering spectrometry
dc.contributor.authorChan, T.K.
dc.contributor.authorFang, F.
dc.contributor.authorMarkwitz, A.
dc.contributor.authorOsipowicz, T.
dc.date.accessioned2014-10-16T09:41:23Z
dc.date.available2014-10-16T09:41:23Z
dc.date.issued2012-08-20
dc.identifier.citationChan, T.K., Fang, F., Markwitz, A., Osipowicz, T. (2012-08-20). Solid phase epitaxy of ultra-shallow Sn implanted Si observed using high-resolution Rutherford backscattering spectrometry. Applied Physics Letters 101 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4747487
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/97961
dc.description.abstractWe present detailed observations of the solid phase epitaxy process in Sn-implanted Si samples with nanometric depth resolution within a 50 nm ultra-shallow region beneath the surface. Measurements were made using high-resolution Rutherford backscattering spectrometry coupled with the ion channeling technique. Samples with Sn ions implanted onto Si substrates with and without prior Si + self-amorphization implantation process show different crystal regrowth characteristics during annealing. Regrowth proceeds at a non-uniform rate up to a certain depth before stopping, and an Arrhenius-type defect density limiting model of crystal regrowth is proposed to account for this effect. © 2012 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4747487
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.4747487
dc.description.sourcetitleApplied Physics Letters
dc.description.volume101
dc.description.issue8
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000308420800023
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