Please use this identifier to cite or link to this item: https://doi.org/10.1088/0953-4075/39/1/005
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dc.titleSingle photon emission from SiV centres in diamond produced by ion implantation
dc.contributor.authorWang, C.
dc.contributor.authorKurtsiefer, C.
dc.contributor.authorWeinfurter, H.
dc.contributor.authorBurchard, B.
dc.date.accessioned2014-10-16T09:41:05Z
dc.date.available2014-10-16T09:41:05Z
dc.date.issued2006-01-14
dc.identifier.citationWang, C., Kurtsiefer, C., Weinfurter, H., Burchard, B. (2006-01-14). Single photon emission from SiV centres in diamond produced by ion implantation. Journal of Physics B: Atomic, Molecular and Optical Physics 39 (1) : 37-41. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-4075/39/1/005
dc.identifier.issn09534075
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/97936
dc.description.abstractWe report the observation of single photon emission from single SiV (silicon-vacancy) centres in diamond produced by ion implantation. The high photostability and the narrow emission bandwidth of about 5 nm at room temperature make SiV centres interesting as a single photon source in practical quantum cryptography. We discuss problems that arise from the nonradiaditve transitions which lower the brightness of the source. © 2006 IOP Publishing Ltd.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1088/0953-4075/39/1/005
dc.description.sourcetitleJournal of Physics B: Atomic, Molecular and Optical Physics
dc.description.volume39
dc.description.issue1
dc.description.page37-41
dc.description.codenJPAPE
dc.identifier.isiut000234934400009
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