Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3687190
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dc.titleSilicon layer intercalation of centimeter-scale, epitaxially grown monolayer graphene on Ru(0001)
dc.contributor.authorMao, J.
dc.contributor.authorHuang, L.
dc.contributor.authorPan, Y.
dc.contributor.authorGao, M.
dc.contributor.authorHe, J.
dc.contributor.authorZhou, H.
dc.contributor.authorGuo, H.
dc.contributor.authorTian, Y.
dc.contributor.authorZou, Q.
dc.contributor.authorZhang, L.
dc.contributor.authorZhang, H.
dc.contributor.authorWang, Y.
dc.contributor.authorDu, S.
dc.contributor.authorZhou, X.
dc.contributor.authorCastro Neto, A.H.
dc.contributor.authorGao, H.-J.
dc.date.accessioned2014-10-16T09:40:53Z
dc.date.available2014-10-16T09:40:53Z
dc.date.issued2012-02-27
dc.identifier.citationMao, J., Huang, L., Pan, Y., Gao, M., He, J., Zhou, H., Guo, H., Tian, Y., Zou, Q., Zhang, L., Zhang, H., Wang, Y., Du, S., Zhou, X., Castro Neto, A.H., Gao, H.-J. (2012-02-27). Silicon layer intercalation of centimeter-scale, epitaxially grown monolayer graphene on Ru(0001). Applied Physics Letters 100 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3687190
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/97919
dc.description.abstractWe develop a strategy for graphene growth on Ru(0001) followed by silicon-layer intercalation that not only weakens the interaction of graphene with the metal substrate but also retains its superlative properties. This G/Si/Ru architecture, produced by silicon-layer intercalation approach (SIA), was characterized by scanning tunneling microscopy/spectroscopy and angle resolved electron photoemission spectroscopy. These experiments show high structural and electronic qualities of this new composite. The SIA allows for an atomic control of the distance between the graphene and the metal substrate that can be used as a top gate. Our results show potential for the next generation of graphene-based materials with tailored properties. © 2012 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3687190
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.3687190
dc.description.sourcetitleApplied Physics Letters
dc.description.volume100
dc.description.issue9
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000301504800048
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