Please use this identifier to cite or link to this item: https://doi.org/10.1021/jp804727c
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dc.titleSilicon carbide nanotubes as potential gas sensors for CO and HCN detection
dc.contributor.authorWu, R.Q.
dc.contributor.authorYang, M.
dc.contributor.authorLu, Y.H.
dc.contributor.authorFeng, Y.P.
dc.contributor.authorHuang, Z.G.
dc.contributor.authorWu, Q.Y.
dc.date.accessioned2014-10-16T09:40:52Z
dc.date.available2014-10-16T09:40:52Z
dc.date.issued2008-10-16
dc.identifier.citationWu, R.Q., Yang, M., Lu, Y.H., Feng, Y.P., Huang, Z.G., Wu, Q.Y. (2008-10-16). Silicon carbide nanotubes as potential gas sensors for CO and HCN detection. Journal of Physical Chemistry C 112 (41) : 15985-15988. ScholarBank@NUS Repository. https://doi.org/10.1021/jp804727c
dc.identifier.issn19327447
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/97918
dc.description.abstractSemiconducting carbon nanotubes (CNTs) have demonstrated extreme sensitivity to molecules such as NH3, NO, NO2, ans so forth. Yet, intrinsic CNTs cannot be used to detect some highly toxic molecules such as CO and HCN. In this article, we examine the possibility of silicon carbide nanotubes (SiCNTs) as a potential gas sensor for CO and HCN detection by first-principles calculations based on density functional theory (DFT). It is found that CO and HCN molecules can be absorbed to Si atoms on the wall of SiCNTs with binding energies as high as 0.70 eV and can attract finite charge from SiCNTs. By comparison to oxygen absorption on CNTs, we infer that molecular CO and HCN absorbed on SiCNTs can induce significant change in the conductivity of SiCNTs. In view of the high portion of the reactive area, SiCNTs can be potential efficient gas sensors for CO and HCN detection. © 2008 American Chemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1021/jp804727c
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1021/jp804727c
dc.description.sourcetitleJournal of Physical Chemistry C
dc.description.volume112
dc.description.issue41
dc.description.page15985-15988
dc.identifier.isiut000259943300011
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