Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.materresbull.2013.04.037
DC FieldValue
dc.titleShape transition of endotaxial islands growth from kinetically constrained to equilibrium regimes
dc.contributor.authorLi, Z.-P.
dc.contributor.authorTok, E.
dc.contributor.authorFoo, Y.
dc.date.accessioned2014-10-16T09:40:48Z
dc.date.available2014-10-16T09:40:48Z
dc.date.issued2013-09
dc.identifier.citationLi, Z.-P., Tok, E., Foo, Y. (2013-09). Shape transition of endotaxial islands growth from kinetically constrained to equilibrium regimes. Materials Research Bulletin 48 (9) : 2998-3008. ScholarBank@NUS Repository. https://doi.org/10.1016/j.materresbull.2013.04.037
dc.identifier.issn00255408
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/97911
dc.description.abstractA comprehensive study of Fe grown on Ge(0 0 1) substrates has been conducted at elevated temperatures, ranging from 350 to 675 C. All iron germinide islands, with the same Fe13Ge8 phase, grow into the Ge substrate with the same epitaxial relationship. Shape transition occurs from small square islands (low temperatures), to elongated orthogonal islands or orthogonal nanowires (intermediate temperatures), and then finally to large square orthogonal islands (high temperatures). According to both transmission electron microscopy (TEM) and atomic force microscopy (AFM) investigations, all islands can be defined as either type-I or type-II. Type-I islands usually form at kinetically constrained growth regimes, like truncated pyramids. Type-II islands usually appear at equilibrium growth regimes forming a dome-like shape. Based on a simple semi-quantitative model, type-II islands have a lower total energy per volume than type-I, which is considered as the dominant mechanism for this type of shape transition. Moreover, this study not only elucidates details of endotaxial growth in the Fe-Ge system, but also suggests the possibility of controlled fabrication of temperature-dependent nanostructures, especially in materials with dissimilar crystal structures. © 2013 Elsevier Ltd. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.materresbull.2013.04.037
dc.sourceScopus
dc.subjectElectron microscopy
dc.subjectEpitaxial growth
dc.subjectInterfaces
dc.subjectMicrostructure
dc.subjectNanostructure
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1016/j.materresbull.2013.04.037
dc.description.sourcetitleMaterials Research Bulletin
dc.description.volume48
dc.description.issue9
dc.description.page2998-3008
dc.description.codenMRBUA
dc.identifier.isiut000322354000003
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