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|Title:||Scanning tunneling microscopy study of higher-order Si(100)-c(8 × 8) surface reconstruction||Authors:||Zilani, M.A.K.
|Issue Date:||1-Oct-2008||Citation:||Zilani, M.A.K., Xu, H., Wang, X.-S., Yakovlev, N., Wee, A.T.S. (2008-10-01). Scanning tunneling microscopy study of higher-order Si(100)-c(8 × 8) surface reconstruction. Journal of Physics Condensed Matter 20 (39) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/20/39/395003||Abstract:||We have studied the higher-order Si(100)-c(8 × 8) surface reconstruction using scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). Our high resolution STM images show that long range ordering of rectangular cells are the building blocks of this reconstruction. We identify Si-Si ad-dimers and determine that three pairs of ad-dimers constitute each rectangular cell. The ad-dimer direction is parallel to the longer side of these rectangular cells. We propose a new dimer model to explain this reconstruction. © 2008 IOP Publishing Ltd.||Source Title:||Journal of Physics Condensed Matter||URI:||http://scholarbank.nus.edu.sg/handle/10635/97861||ISSN:||09538984||DOI:||10.1088/0953-8984/20/39/395003|
|Appears in Collections:||Staff Publications|
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