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Title: Scanning tunneling microscopy study of higher-order Si(100)-c(8 × 8) surface reconstruction
Authors: Zilani, M.A.K. 
Xu, H. 
Wang, X.-S. 
Yakovlev, N.
Wee, A.T.S. 
Issue Date: 1-Oct-2008
Citation: Zilani, M.A.K., Xu, H., Wang, X.-S., Yakovlev, N., Wee, A.T.S. (2008-10-01). Scanning tunneling microscopy study of higher-order Si(100)-c(8 × 8) surface reconstruction. Journal of Physics Condensed Matter 20 (39) : -. ScholarBank@NUS Repository.
Abstract: We have studied the higher-order Si(100)-c(8 × 8) surface reconstruction using scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). Our high resolution STM images show that long range ordering of rectangular cells are the building blocks of this reconstruction. We identify Si-Si ad-dimers and determine that three pairs of ad-dimers constitute each rectangular cell. The ad-dimer direction is parallel to the longer side of these rectangular cells. We propose a new dimer model to explain this reconstruction. © 2008 IOP Publishing Ltd.
Source Title: Journal of Physics Condensed Matter
ISSN: 09538984
DOI: 10.1088/0953-8984/20/39/395003
Appears in Collections:Staff Publications

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