Please use this identifier to cite or link to this item:
https://doi.org/10.1016/S0022-0248(00)00900-3
DC Field | Value | |
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dc.title | Rotary target method to prepare thin films of CdS/SiO2 by pulsed laser deposition | |
dc.contributor.author | Wang, H. | |
dc.contributor.author | Zhu, Y. | |
dc.contributor.author | Ong, P.P. | |
dc.date.accessioned | 2014-10-16T09:40:01Z | |
dc.date.available | 2014-10-16T09:40:01Z | |
dc.date.issued | 2000-12 | |
dc.identifier.citation | Wang, H., Zhu, Y., Ong, P.P. (2000-12). Rotary target method to prepare thin films of CdS/SiO2 by pulsed laser deposition. Journal of Crystal Growth 220 (4) : 554-559. ScholarBank@NUS Repository. https://doi.org/10.1016/S0022-0248(00)00900-3 | |
dc.identifier.issn | 00220248 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/97846 | |
dc.description.abstract | Thin films of CdS-doped SiO2 glass were prepared by using the conventional pulsed laser deposition (PLD) technique. The laser target consisted of a specially constructed rotary wheel which provided easy control of the exposure-area ratio to expose alternately the two materials to the laser beam. The physical target assembly avoided the potential complications inherent in chemically mixed targets such as in the sol-gel method. Time-of-flight (TOF) spectra confirmed the existence of the SiO2 and CdS components in the thin-film samples so produced. X-ray diffraction (XRD) and atomic force microscopy (AFM) results showed the different sizes and structures of the as-deposited and annealed films. The wurtzite phase of CdS was found in the 600 °C-annealed sample, while the as-deposited film showed a cubic-hexagonal mixed structure. In the corresponding PL (photoluminescence) spectra, a red shift of the CdS band edge emission was found, which may be a result of the interaction between the CdS nanocrystallite and SiO2 at their interface. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S0022-0248(00)00900-3 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.description.doi | 10.1016/S0022-0248(00)00900-3 | |
dc.description.sourcetitle | Journal of Crystal Growth | |
dc.description.volume | 220 | |
dc.description.issue | 4 | |
dc.description.page | 554-559 | |
dc.description.coden | JCRGA | |
dc.identifier.isiut | 000165957500032 | |
Appears in Collections: | Staff Publications |
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