Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0022-0248(00)00900-3
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dc.titleRotary target method to prepare thin films of CdS/SiO2 by pulsed laser deposition
dc.contributor.authorWang, H.
dc.contributor.authorZhu, Y.
dc.contributor.authorOng, P.P.
dc.date.accessioned2014-10-16T09:40:01Z
dc.date.available2014-10-16T09:40:01Z
dc.date.issued2000-12
dc.identifier.citationWang, H., Zhu, Y., Ong, P.P. (2000-12). Rotary target method to prepare thin films of CdS/SiO2 by pulsed laser deposition. Journal of Crystal Growth 220 (4) : 554-559. ScholarBank@NUS Repository. https://doi.org/10.1016/S0022-0248(00)00900-3
dc.identifier.issn00220248
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/97846
dc.description.abstractThin films of CdS-doped SiO2 glass were prepared by using the conventional pulsed laser deposition (PLD) technique. The laser target consisted of a specially constructed rotary wheel which provided easy control of the exposure-area ratio to expose alternately the two materials to the laser beam. The physical target assembly avoided the potential complications inherent in chemically mixed targets such as in the sol-gel method. Time-of-flight (TOF) spectra confirmed the existence of the SiO2 and CdS components in the thin-film samples so produced. X-ray diffraction (XRD) and atomic force microscopy (AFM) results showed the different sizes and structures of the as-deposited and annealed films. The wurtzite phase of CdS was found in the 600 °C-annealed sample, while the as-deposited film showed a cubic-hexagonal mixed structure. In the corresponding PL (photoluminescence) spectra, a red shift of the CdS band edge emission was found, which may be a result of the interaction between the CdS nanocrystallite and SiO2 at their interface.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S0022-0248(00)00900-3
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1016/S0022-0248(00)00900-3
dc.description.sourcetitleJournal of Crystal Growth
dc.description.volume220
dc.description.issue4
dc.description.page554-559
dc.description.codenJCRGA
dc.identifier.isiut000165957500032
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