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|Title:||Room-temperature photoluminescence, contactless electroreflectance, and X-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure||Authors:||Huang, Y.S.
|Issue Date:||29-Mar-1999||Citation:||Huang, Y.S.,Sun, W.D.,Malikova, L.,Pollak, F.H.,Ferguson, I.,Hou, H.,Feng, Z.C.,Ryan, T.,Fantner, E.B. (1999-03-29). Room-temperature photoluminescence, contactless electroreflectance, and X-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure. Applied Physics Letters 74 (13) : 1851-1853. ScholarBank@NUS Repository.||Abstract:||Metallorganic chemical vapor deposited double-sided delta-doped Ga0.8Al0.2As/In0.2Ga0.8As pseudomorphic high electron mobility transistor were examined using nondestructive, room temperature photoluminescence, contactless electroreflectance and X-rays. Optical signals were evaluated from every portion of the sample to determine the In and Al compositions, channel width, two-dimensional electron gas density and the properties of the GaAs/GaAlAs superlattice buffer layer.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/97845||ISSN:||00036951|
|Appears in Collections:||Staff Publications|
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