Please use this identifier to cite or link to this item: https://doi.org/10.1143/JJAP.50.04DF06
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dc.titleReduced contact resistance and improved surface morphology of ohmic contacts on gan employing krf laser irradiation
dc.contributor.authorWang, G.H.
dc.contributor.authorWong, T.-C.
dc.contributor.authorWang, X.-C.
dc.contributor.authorZheng, H.-Y.
dc.contributor.authorChan, T.-K.
dc.contributor.authorOsipowicz, T.
dc.contributor.authorFoo, Y.-L.
dc.contributor.authorTripathy, S.
dc.date.accessioned2014-10-16T09:39:14Z
dc.date.available2014-10-16T09:39:14Z
dc.date.issued2011-04
dc.identifier.citationWang, G.H., Wong, T.-C., Wang, X.-C., Zheng, H.-Y., Chan, T.-K., Osipowicz, T., Foo, Y.-L., Tripathy, S. (2011-04). Reduced contact resistance and improved surface morphology of ohmic contacts on gan employing krf laser irradiation. Japanese Journal of Applied Physics 50 (4 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.50.04DF06
dc.identifier.issn00214922
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/97779
dc.description.abstractWe employ excimer laser annealing for ohmic contact formation to n- and p-type GaN layers grown on sapphire substrates. The laser irradiation of the n-GaN layers led to increased nitrogen vacancies at the nitride surface, which promoted tunneling currents with a less resistive n-contact. For p-GaN layer, the laser irradiation increased the effective hole concentration that resulted in a reduced contact resistivity. The lowest specific contact resistance measured using the transmission line method was about 2:4 × 10 -7 and 3:2 × 10-4 ωcm2 for n- and p-contacts, respectively. Laser irradiation also resulted in a comparatively good surface morphology as compared to rapid thermal annealing, which in turn improved the transmittance of contacts for light extraction from active layers. It was found out that both the electrical and optical characteristics of the p-GaN contacts exhibited a good thermal stability and an improved transmittance in the blue-green spectral range. An increased forward current with a reduced ohmic contact resistance in such high thermal stable contacts enable the fabrication of GaN light emitting diodes. © 2011 The Japan Society of Applied Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1143/JJAP.50.04DF06
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1143/JJAP.50.04DF06
dc.description.sourcetitleJapanese Journal of Applied Physics
dc.description.volume50
dc.description.issue4 PART 2
dc.description.page-
dc.identifier.isiut000289722400076
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