Please use this identifier to cite or link to this item: https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-A
Title: Reactive atom synthesis and characterization of C3N4 crystalline films
Authors: Li, Y.G.
Wee, A.T.S. 
Huan, C.H.A. 
Li, W.S. 
Pan, J.S.
Issue Date: 1999
Citation: Li, Y.G.,Wee, A.T.S.,Huan, C.H.A.,Li, W.S.,Pan, J.S. (1999). Reactive atom synthesis and characterization of C3N4 crystalline films. Surface and Interface Analysis 28 (1) : 221-225. ScholarBank@NUS Repository. https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-A
Abstract: Beta-C3N4 crystalline films have been grown on Si(100) substrates by reactive atom vapour deposition. The lattice parameters of the β-C3N4 crystalline phase, determined by x-ray diffraction and transmission electron diffraction, respectively, are both in good agreement with the theoretically predicted β-C3N4 structure lattice constant. X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy and Raman spectroscopy experiments indicate the existence of single and double carbon-nitrogen bonds in the films. The total NC ratio in the films was determined by XPS to be 1.07, with the C-N bonds (which form the β-C3N4 crystalline phase) comprising up to 58% of the film. Raman spectra revealed two resolved peaks at 1224 cm-1 and 1310 cm-1, suggesting the formation of a fourfold coordinated C-N bond, and another two peaks at 1416 cm-1 and 1950 cm-1. Fourier transform infrared spectroscopy also confirmed the presence of sp3- and sp2-hybridized carbon atoms tetrahedrally and hexagonally bonded with nitrogen atoms. The root-mean-square roughness of the film surface was determined by atomic force microscopy to be 18.9 nm.
Source Title: Surface and Interface Analysis
URI: http://scholarbank.nus.edu.sg/handle/10635/97762
ISSN: 01422421
DOI: 10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-A
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