Please use this identifier to cite or link to this item: https://doi.org/10.1021/nn203472f
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dc.titleRaman characterization of ABA- and ABC-stacked trilayer graphene
dc.contributor.authorCong, C.
dc.contributor.authorYu, T.
dc.contributor.authorSato, K.
dc.contributor.authorShang, J.
dc.contributor.authorSaito, R.
dc.contributor.authorDresselhaus, G.F.
dc.contributor.authorDresselhaus, M.S.
dc.date.accessioned2014-10-16T09:38:40Z
dc.date.available2014-10-16T09:38:40Z
dc.date.issued2011-11-22
dc.identifier.citationCong, C., Yu, T., Sato, K., Shang, J., Saito, R., Dresselhaus, G.F., Dresselhaus, M.S. (2011-11-22). Raman characterization of ABA- and ABC-stacked trilayer graphene. ACS Nano 5 (11) : 8760-8768. ScholarBank@NUS Repository. https://doi.org/10.1021/nn203472f
dc.identifier.issn19360851
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/97731
dc.description.abstractBernal (ABA stacking order) and rhombohedral (ABC) trilayer graphene (3LG) are characterized by Raman spectroscopy. From a systematic experimental and theoretical analysis of the Raman modes in both of these 3LGs, we show that the G band, G' (2D) band, and the intermediate-frequency combination modes of 3LGs are sensitive to the stacking order of 3LG. The phonon wavevector q, that gives the double resonance Raman spectra is larger in ABC than ABA, which is the reason why we get the different Raman frequencies and their spectral widths for ABA and ABC 3LG. The weak electron-phonon interaction in ABC-stacked 3LG and the localized strain at the boundary between ABC- and ABA-stacked domains are clearly reflected by the softening of the G mode and the G' mode, respectively. © 2011 American Chemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1021/nn203472f
dc.sourceScopus
dc.subjectdouble resonance Raman spectroscopy
dc.subjectelectron-phonon interaction
dc.subjectgraphene
dc.subjectRaman scattering
dc.subjectstacking order
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1021/nn203472f
dc.description.sourcetitleACS Nano
dc.description.volume5
dc.description.issue11
dc.description.page8760-8768
dc.identifier.isiut000297143300034
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