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|Title:||Quantitative analysis of a-Si1 - XCx:H thin films||Authors:||Gracin, D.
|Issue Date:||Apr-1999||Citation:||Gracin, D.,Jakšić, M.,Yang, C.,Borjanović, V.,Praček, B. (1999-04). Quantitative analysis of a-Si1 - XCx:H thin films. Applied Surface Science 144-145 (0) : 188-191. ScholarBank@NUS Repository.||Abstract:||The composition of a-Si1 - xCx:H films, deposited by magnetron sputtering, was measured by AES (Auger Electron Spectroscopy), RBS (Rutherford Backscattering Spectrometry) using both, protons and α-particles, ERDA (Elastic Recoil Detection Analysis) and FTIR spectroscopy. The results obtained by all three methods show agreement in CC/CSi ratio within the experimental error. However, the AES somewhat underestimates the silicon concentrations, which is discussed as a consequence of chemical bonding and matrix effects. The hydrogen concentrations obtained by ERDA are typically about 30% higher than those estimated by FTIR, possibly due to the presence of non-bonded hydrogen in the film. © 1999 Elsevier Science B.V. All rights reserved.||Source Title:||Applied Surface Science||URI:||http://scholarbank.nus.edu.sg/handle/10635/97660||ISSN:||01694332|
|Appears in Collections:||Staff Publications|
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