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Title: Probing near Dirac point electron-phonon interaction in graphene
Authors: Shang, J.
Yan, S.
Cong, C.
Tan, H.-S.
Yu, T. 
Gurzadyan, G.G.
Issue Date: 2012
Citation: Shang, J., Yan, S., Cong, C., Tan, H.-S., Yu, T., Gurzadyan, G.G. (2012). Probing near Dirac point electron-phonon interaction in graphene. Optical Materials Express 2 (12) : 1713-1722. ScholarBank@NUS Repository.
Abstract: Carrier dynamics in graphene films on CaF2 have been measured in the mid infrared region by femtosecond pump-probe spectroscopy. The relaxation kinetics shows two decay times. The fast time component is ~0.2 ps, which is attributed to the mixture of initial few ultrafast intraband and interband decay channels. The slow component is ~1.5 ps, which is primarily assigned to optical phonon-acoustic phonon scattering. The contribution of fast component exhibits an increase trend in the probe photon frequencies from 2600 to 3100 cm-1. At the probe frequency of 2700 cm-1, the accelerated carrier relaxation was detected, which resulted from the interband triple-resonance electron-phonon scattering in graphene. At the probe frequency of 3175 cm-1, a clear instant negative differential transmission signal was observed, which is due to stimulated two-phonon emission involved with G phonons in graphene. This result indicates that graphene can be used as a source of coherent ultrashort sound-wave emission. © 2012 Optical Society of America.
Source Title: Optical Materials Express
ISSN: 21593930
DOI: 10.1364/OME.2.001713
Appears in Collections:Staff Publications

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