Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2883941
DC FieldValue
dc.titleProbing epitaxial growth of graphene on silicon carbide by metal decoration
dc.contributor.authorPoon, S.W.
dc.contributor.authorChen, W.
dc.contributor.authorTok, E.S.
dc.contributor.authorWee, A.T.S.
dc.date.accessioned2014-10-16T09:37:19Z
dc.date.available2014-10-16T09:37:19Z
dc.date.issued2008
dc.identifier.citationPoon, S.W., Chen, W., Tok, E.S., Wee, A.T.S. (2008). Probing epitaxial growth of graphene on silicon carbide by metal decoration. Applied Physics Letters 92 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2883941
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/97613
dc.description.abstractUsing Co-decoration technique coupled with in situ scanning tunneling microscope (STM), the evolution of epitaxial graphene was found to preferentially begin at step edges of the silicon carbide surface and occurs with loss of Si and breakdown of C-rich (63×63) R30° template, which provides the C source for graphene growth. Interestingly, a new C-rich phase is also formed at the interface and it acts as a buffer layer for graphene from underlying bulk. STM reveals that graphene lies 2.3±0.3 Å above the buffer layer, larger than s p3 C-C bond length (1.54 Å) but shorter than graphite interlayer separation (3.37 Å), suggesting a pseudo-van der Waals interfacial interaction. © 2008 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2883941
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.2883941
dc.description.sourcetitleApplied Physics Letters
dc.description.volume92
dc.description.issue10
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000253989300164
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