Please use this identifier to cite or link to this item:
https://doi.org/10.1088/0953-8984/13/18/315
DC Field | Value | |
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dc.title | Preparation and photoluminescence of thin films of Ge nanoparticles embedded in Al2O3 matrices | |
dc.contributor.author | Zhu, Y. | |
dc.contributor.author | Ong, P.P. | |
dc.date.accessioned | 2014-10-16T09:36:59Z | |
dc.date.available | 2014-10-16T09:36:59Z | |
dc.date.issued | 2001-05-07 | |
dc.identifier.citation | Zhu, Y., Ong, P.P. (2001-05-07). Preparation and photoluminescence of thin films of Ge nanoparticles embedded in Al2O3 matrices. Journal of Physics Condensed Matter 13 (18) : 4075-4080. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/13/18/315 | |
dc.identifier.issn | 09538984 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/97587 | |
dc.description.abstract | Thin films of Ge/Al2O3 were prepared using the pulsed laser deposition method. XRD and AFM confirmed that the structure consists of Ge nanoparticles embedded in amorphous Al2O3 matrices. A blue PL from the films was found in the wavelength region of 400-550 nm with two distinct humps in the peak. The origin of the PL is attributed to localized Ge/O-related interfacial defects. Our results show evidence that the amorphous Al2O3 matrices encapsulating the Ge nanocrystals provided them with a compact and air-tight seal preventing atmospheric oxygen from diffusing into the surface of the Ge nanoparticles even when the film was annealed at a high temperature. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.description.doi | 10.1088/0953-8984/13/18/315 | |
dc.description.sourcetitle | Journal of Physics Condensed Matter | |
dc.description.volume | 13 | |
dc.description.issue | 18 | |
dc.description.page | 4075-4080 | |
dc.description.coden | JCOME | |
dc.identifier.isiut | 000168910800018 | |
Appears in Collections: | Staff Publications |
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