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|Title:||Preparation and photoluminescence of thin films of Ge nanoparticles embedded in Al2O3 matrices||Authors:||Zhu, Y.
|Issue Date:||7-May-2001||Citation:||Zhu, Y., Ong, P.P. (2001-05-07). Preparation and photoluminescence of thin films of Ge nanoparticles embedded in Al2O3 matrices. Journal of Physics Condensed Matter 13 (18) : 4075-4080. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/13/18/315||Abstract:||Thin films of Ge/Al2O3 were prepared using the pulsed laser deposition method. XRD and AFM confirmed that the structure consists of Ge nanoparticles embedded in amorphous Al2O3 matrices. A blue PL from the films was found in the wavelength region of 400-550 nm with two distinct humps in the peak. The origin of the PL is attributed to localized Ge/O-related interfacial defects. Our results show evidence that the amorphous Al2O3 matrices encapsulating the Ge nanocrystals provided them with a compact and air-tight seal preventing atmospheric oxygen from diffusing into the surface of the Ge nanoparticles even when the film was annealed at a high temperature.||Source Title:||Journal of Physics Condensed Matter||URI:||http://scholarbank.nus.edu.sg/handle/10635/97587||ISSN:||09538984||DOI:||10.1088/0953-8984/13/18/315|
|Appears in Collections:||Staff Publications|
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