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https://doi.org/10.1002/(SICI)1096-9918(199908)28:1<245::AID-SIA586>3.0.CO;2-I
Title: | Post-annealing effect in reactive r.f.-magnetron-sputtered carbon nitride thin films | Authors: | Chen, G.L. Li, Y. Lin, J. Huan, C.H.A. Guo, Y.P. |
Issue Date: | 1999 | Citation: | Chen, G.L., Li, Y., Lin, J., Huan, C.H.A., Guo, Y.P. (1999). Post-annealing effect in reactive r.f.-magnetron-sputtered carbon nitride thin films. Surface and Interface Analysis 28 (1) : 245-249. ScholarBank@NUS Repository. https://doi.org/10.1002/(SICI)1096-9918(199908)28:1<245::AID-SIA586>3.0.CO;2-I | Abstract: | Thin films of CNx were deposited by reactive r.f.-magnetron sputtering on Si(100) substrates. The effect of annealing temperatures on the structural properties of the films has been studied by Fourier transform infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). Both FTIR and XPS results show that the population of the carbon nitrogen phase decreases upon annealing in a vacuum. The XPS N 1s peaks indicate the component due to the carbon nitrogen bond to be significantly weaker than the others. An increase of the annealing temperature leads to a more prominent peak corresponding to the C-N phase in the FTIR absorption spectra. These results suggest a substantial decrease of the weakly bound nitrogen and carbon dangling bonds. Electron diffraction measurements reveal the existence of polycrystalline C3N4 structures in films annealed at 700 °C in a vacuum. The XPS studies confirmed that these crystalline phases are composed exclusively of carbon and nitrogen. | Source Title: | Surface and Interface Analysis | URI: | http://scholarbank.nus.edu.sg/handle/10635/97574 | ISSN: | 01422421 | DOI: | 10.1002/(SICI)1096-9918(199908)28:1<245::AID-SIA586>3.0.CO;2-I |
Appears in Collections: | Staff Publications |
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