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https://doi.org/10.1002/(SICI)1096-9918(199908)28:1<245::AID-SIA586>3.0.CO;2-I
DC Field | Value | |
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dc.title | Post-annealing effect in reactive r.f.-magnetron-sputtered carbon nitride thin films | |
dc.contributor.author | Chen, G.L. | |
dc.contributor.author | Li, Y. | |
dc.contributor.author | Lin, J. | |
dc.contributor.author | Huan, C.H.A. | |
dc.contributor.author | Guo, Y.P. | |
dc.date.accessioned | 2014-10-16T09:36:51Z | |
dc.date.available | 2014-10-16T09:36:51Z | |
dc.date.issued | 1999 | |
dc.identifier.citation | Chen, G.L., Li, Y., Lin, J., Huan, C.H.A., Guo, Y.P. (1999). Post-annealing effect in reactive r.f.-magnetron-sputtered carbon nitride thin films. Surface and Interface Analysis 28 (1) : 245-249. ScholarBank@NUS Repository. https://doi.org/10.1002/(SICI)1096-9918(199908)28:1<245::AID-SIA586>3.0.CO;2-I | |
dc.identifier.issn | 01422421 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/97574 | |
dc.description.abstract | Thin films of CNx were deposited by reactive r.f.-magnetron sputtering on Si(100) substrates. The effect of annealing temperatures on the structural properties of the films has been studied by Fourier transform infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). Both FTIR and XPS results show that the population of the carbon nitrogen phase decreases upon annealing in a vacuum. The XPS N 1s peaks indicate the component due to the carbon nitrogen bond to be significantly weaker than the others. An increase of the annealing temperature leads to a more prominent peak corresponding to the C-N phase in the FTIR absorption spectra. These results suggest a substantial decrease of the weakly bound nitrogen and carbon dangling bonds. Electron diffraction measurements reveal the existence of polycrystalline C3N4 structures in films annealed at 700 °C in a vacuum. The XPS studies confirmed that these crystalline phases are composed exclusively of carbon and nitrogen. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | MATERIALS SCIENCE | |
dc.contributor.department | PHYSICS | |
dc.description.doi | 10.1002/(SICI)1096-9918(199908)28:1<245::AID-SIA586>3.0.CO;2-I | |
dc.description.sourcetitle | Surface and Interface Analysis | |
dc.description.volume | 28 | |
dc.description.issue | 1 | |
dc.description.page | 245-249 | |
dc.description.coden | SIAND | |
dc.identifier.isiut | NOT_IN_WOS | |
dc.published.state | Unpublished | |
Appears in Collections: | Staff Publications |
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