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|Title:||Post-annealing effect in reactive r.f.-magnetron-sputtered carbon nitride thin films||Authors:||Chen, G.L.
|Issue Date:||1999||Citation:||Chen, G.L.,Li, Y.,Lin, J.,Huan, C.H.A.,Guo, Y.P. (1999). Post-annealing effect in reactive r.f.-magnetron-sputtered carbon nitride thin films. Surface and Interface Analysis 28 (1) : 245-249. ScholarBank@NUS Repository. https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-I||Abstract:||Thin films of CNx were deposited by reactive r.f.-magnetron sputtering on Si(100) substrates. The effect of annealing temperatures on the structural properties of the films has been studied by Fourier transform infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). Both FTIR and XPS results show that the population of the carbon nitrogen phase decreases upon annealing in a vacuum. The XPS N 1s peaks indicate the component due to the carbon nitrogen bond to be significantly weaker than the others. An increase of the annealing temperature leads to a more prominent peak corresponding to the C-N phase in the FTIR absorption spectra. These results suggest a substantial decrease of the weakly bound nitrogen and carbon dangling bonds. Electron diffraction measurements reveal the existence of polycrystalline C3N4 structures in films annealed at 700 °C in a vacuum. The XPS studies confirmed that these crystalline phases are composed exclusively of carbon and nitrogen.||Source Title:||Surface and Interface Analysis||URI:||http://scholarbank.nus.edu.sg/handle/10635/97574||ISSN:||01422421||DOI:||10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-I|
|Appears in Collections:||Staff Publications|
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