Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0009-2614(01)00308-6
Title: Photoluminescence studies of SiC nanocrystals embedded in a SiO2 matrix
Authors: Guo, Y.P. 
Zheng, J.C. 
Wee, A.T.S. 
Huan, C.H.A. 
Li, K.
Pan, J.S.
Feng, Z.C.
Chua, S.J.
Issue Date: 18-May-2001
Citation: Guo, Y.P., Zheng, J.C., Wee, A.T.S., Huan, C.H.A., Li, K., Pan, J.S., Feng, Z.C., Chua, S.J. (2001-05-18). Photoluminescence studies of SiC nanocrystals embedded in a SiO2 matrix. Chemical Physics Letters 339 (5-6) : 319-322. ScholarBank@NUS Repository. https://doi.org/10.1016/S0009-2614(01)00308-6
Abstract: The dependence of the photoluminescence (PL) from SiC nanocrystals embedded in a SiO2 matrix on annealing is presented. Blue-green PL has been observed at room temperature from annealed SiC-SiO2 composite films. The intensity of the single emission band at 460 nm (2.7 eV) shows a strong dependence on the annealing temperature. The combination of high-resolution transmission electron microscopy (HRTEM), Fourier transform infrared (FTIR) transmission spectra and PL results suggest that SiC nanocrystals have been incorporated into the SiO2 matrix and O-deficient defects were formed. The origin of luminescence is attributed to the creation of defects in silicon oxide. © 2001 Elsevier Science B.V.
Source Title: Chemical Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/97541
ISSN: 00092614
DOI: 10.1016/S0009-2614(01)00308-6
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