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|Title:||Photoluminescence studies of SiC nanocrystals embedded in a SiO2 matrix||Authors:||Guo, Y.P.
|Issue Date:||18-May-2001||Citation:||Guo, Y.P., Zheng, J.C., Wee, A.T.S., Huan, C.H.A., Li, K., Pan, J.S., Feng, Z.C., Chua, S.J. (2001-05-18). Photoluminescence studies of SiC nanocrystals embedded in a SiO2 matrix. Chemical Physics Letters 339 (5-6) : 319-322. ScholarBank@NUS Repository. https://doi.org/10.1016/S0009-2614(01)00308-6||Abstract:||The dependence of the photoluminescence (PL) from SiC nanocrystals embedded in a SiO2 matrix on annealing is presented. Blue-green PL has been observed at room temperature from annealed SiC-SiO2 composite films. The intensity of the single emission band at 460 nm (2.7 eV) shows a strong dependence on the annealing temperature. The combination of high-resolution transmission electron microscopy (HRTEM), Fourier transform infrared (FTIR) transmission spectra and PL results suggest that SiC nanocrystals have been incorporated into the SiO2 matrix and O-deficient defects were formed. The origin of luminescence is attributed to the creation of defects in silicon oxide. © 2001 Elsevier Science B.V.||Source Title:||Chemical Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/97541||ISSN:||00092614||DOI:||10.1016/S0009-2614(01)00308-6|
|Appears in Collections:||Staff Publications|
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