Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1430857
Title: Photoluminescence and photoelectron spectroscopic analysis of InGaAsN grown by metalorganic chemical vapor deposition
Authors: Chang, W.
Lin, J. 
Zhou, W.
Chua, S.J.
Feng, Z.C.
Issue Date: 31-Dec-2001
Citation: Chang, W., Lin, J., Zhou, W., Chua, S.J., Feng, Z.C. (2001-12-31). Photoluminescence and photoelectron spectroscopic analysis of InGaAsN grown by metalorganic chemical vapor deposition. Applied Physics Letters 79 (27) : 4497-4499. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1430857
Abstract: InGaAsN films and InGaAsN/GaAs quantum wells were grown by metalorganic chemical vapor deposition using 1,1-dimethylhydrazine and tetrirybutylarsice as N and As sources, respectively. A photoluminescence peak at 1.22 μm wavelength at low temperature was observed for the In0.26Ga0.74As1-yNy/GaAs quantum wells. X-ray photoelectron spectroscopy investigation on the InGaAsN films demonstrated the success of nitrogen incorporation and provided evidence of the existence of two principle N configurations, indicating the formation of N-In and N-O,H bonds. The addition of N atoms increases the In concentration in InGaAsN wafers, whereas postgrowth annealing results in In diffusion in surface region.© 2001 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/97538
ISSN: 00036951
DOI: 10.1063/1.1430857
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