Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4823779
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dc.titlePhotocurrent characteristics of individual GeSe2 nanobelt with Schottky effects
dc.contributor.authorMukherjee, B.
dc.contributor.authorTok, E.S.
dc.contributor.authorSow, C.H.
dc.date.accessioned2014-10-16T09:36:21Z
dc.date.available2014-10-16T09:36:21Z
dc.date.issued2013
dc.identifier.citationMukherjee, B., Tok, E.S., Sow, C.H. (2013). Photocurrent characteristics of individual GeSe2 nanobelt with Schottky effects. Journal of Applied Physics 114 (13) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4823779
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/97532
dc.description.abstractSingle crystal GeSe2 nanobelts (NBs) were successfully grown using chemical vapor deposition techniques. The morphology and structure of the nanostructures were characterized using scanning electron microscopy, transmission electron microscopy, X-ray diffractometry, and Raman spectroscopy. Electronic transport properties, photoconductive characteristics, and temperature-dependent electronic characteristics were examined on devices made of individual GeSe2 nanobelt. The current increased by three orders of magnitude upon laser irradiation (wavelength 532 nm and intensity ∼6.8 mW/cm2) with responsivity of ∼2764 A/W at fixed 4 V bias. Localized photoconductivity study shows that the large photoresponse of the device primarily occurs at the metal-NB contact regions. In addition, the electrically Schottky nature of nanobelt/Au contact and p-type conductivity nature of GeSe2 nanobelt are extracted from the current-voltage characteristics and spatially resolved photocurrent measurements. The high sensitivity and quick photoresponse in the visible wavelength range indicate potential applications of individual GeSe2 nanobelt devices in realizing optoelectronic switches. © 2013 AIP Publishing LLC.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4823779
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.4823779
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume114
dc.description.issue13
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000325488700037
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