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|Title:||Microwave dielectric relaxation of silicon crystals||Authors:||Ding, X.Z.
|Issue Date:||Nov-1994||Citation:||Ding, X.Z.,Lu Taijing,Ong, C.K.,Tan, B.T.G. (1994-11). Microwave dielectric relaxation of silicon crystals. Journal of Physics and Chemistry of Solids 55 (11) : 1369-1373. ScholarBank@NUS Repository.||Abstract:||The dielectric properties of Si crystals are studied in the frequency range of 0.5-13.5 GHz using convenient non-destructive measurement of a material permittivity system which consists of an open-ended co-axial line and a microwave vector network analyser. It is found that there exists a dielectric relaxation at microwave frequency in Czochralski grown silicon crystals (CZ-Si). The dielectric constant of CZ-Si varies from about 70.0 to 11.7 within the frequency region studied. In contrast to CZ-Si, floating zone grown silicon shows no such relaxation phenomenon. The correlation between the impurity properties and the dielectric relaxation in silicon crystals is discussed. © 1994.||Source Title:||Journal of Physics and Chemistry of Solids||URI:||http://scholarbank.nus.edu.sg/handle/10635/97214||ISSN:||00223697|
|Appears in Collections:||Staff Publications|
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