Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/97203
Title: Micro-Raman and photoluminescence investigation of ZnxCd1-xSe thin film under high pressure
Authors: Li, W.S. 
Shen, Z.X. 
Shen, D.Z.
Fan, X.W.
Issue Date: 1-Nov-1998
Citation: Li, W.S.,Shen, Z.X.,Shen, D.Z.,Fan, X.W. (1998-11-01). Micro-Raman and photoluminescence investigation of ZnxCd1-xSe thin film under high pressure. Journal of Applied Physics 84 (9) : 5198-5201. ScholarBank@NUS Repository.
Abstract: Micro-Raman and photoluminescence (PL) studies of a ZnxCd1-xSe (x=0.68) thin film sample have been carried out under high pressure at room temperature. In the PL spectra, the PL energy gap shift exhibits sublinearity with pressure and a least-square fitting to the experimental data gives pressure coefficients of α=0.082 eV/GPa and β=-0.0052 eV/GPa2. The second-order pressure coefficient β of the energy gap obtained experimentally is anomalously large and its origin was explained by alloy potential fluctuation with increasing pressure. From the Raman spectra the first-order pressure coefficient was also calculated using least-square fitting. The low energy tail of the longitudinal-optical phonon was found to develop with pressure and the line shape change with pressure is interpreted in terms of a "spatial correlation" model. © 1998 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/97203
ISSN: 00218979
Appears in Collections:Staff Publications

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