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|Title:||Micro-Raman and photoluminescence investigation of ZnxCd1-xSe thin film under high pressure||Authors:||Li, W.S.
|Issue Date:||1-Nov-1998||Citation:||Li, W.S.,Shen, Z.X.,Shen, D.Z.,Fan, X.W. (1998-11-01). Micro-Raman and photoluminescence investigation of ZnxCd1-xSe thin film under high pressure. Journal of Applied Physics 84 (9) : 5198-5201. ScholarBank@NUS Repository.||Abstract:||Micro-Raman and photoluminescence (PL) studies of a ZnxCd1-xSe (x=0.68) thin film sample have been carried out under high pressure at room temperature. In the PL spectra, the PL energy gap shift exhibits sublinearity with pressure and a least-square fitting to the experimental data gives pressure coefficients of α=0.082 eV/GPa and β=-0.0052 eV/GPa2. The second-order pressure coefficient β of the energy gap obtained experimentally is anomalously large and its origin was explained by alloy potential fluctuation with increasing pressure. From the Raman spectra the first-order pressure coefficient was also calculated using least-square fitting. The low energy tail of the longitudinal-optical phonon was found to develop with pressure and the line shape change with pressure is interpreted in terms of a "spatial correlation" model. © 1998 American Institute of Physics.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/97203||ISSN:||00218979|
|Appears in Collections:||Staff Publications|
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