Please use this identifier to cite or link to this item:
Title: Lattice substitution of phosphorous in diamond by Mev ion implantation and pulsed laser annealing
Authors: Prawer, S.
Jamieson, D.N.
Walker, R.J.
Lee, K.K.
Watt, F. 
Kalish, R.
Keywords: Diamond
Ion implantation
Laser annealing
Nuclear microprobe
Issue Date: 1996
Citation: Prawer, S.,Jamieson, D.N.,Walker, R.J.,Lee, K.K.,Watt, F.,Kalish, R. (1996). Lattice substitution of phosphorous in diamond by Mev ion implantation and pulsed laser annealing. New Diamond and Frontier Carbon Technology 6 (6) : 351-358. ScholarBank@NUS Repository.
Abstract: The difficulty of n-type doping of diamond is a well-known problem. In this work, we report a scheme to achieve over 40% lattice substitution of phosphorous (a potential n-type dopant) on diamond lattice sites by MeV P ion implantation. When followed by pulsed laser annealing using a laser beam focused to 15 μm in diameter, this scheme results in a doped layer buried about 1 μm below the surface. Analysis of the doped annealed region was accomplished by the use of a nuclear microprobe system, which allowed backscattering spectrometry and particle induced X-ray emission (PIXE), with ion channeling, to be applied to the laser annealed zones of the diamond. The analysis indicated that, remarkably, laser pulses of only tens of ns in duration are sufficient for annealing the radiation damage and forcing about half the implanted P onto the lattice sites, where they are expected to be electrically active donors.
Source Title: New Diamond and Frontier Carbon Technology
ISSN: 13449931
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

checked on May 3, 2021

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.