Please use this identifier to cite or link to this item:;2-2
Title: Laser-induced formation of titanium silicides
Authors: Chen, S.Y.
Shen, Z.X. 
Chen, Z.D.
See, A.K.
Chan, L.H.
Zhang, T.J.
Tee, K.C.
Issue Date: 1999
Citation: Chen, S.Y.,Shen, Z.X.,Chen, Z.D.,See, A.K.,Chan, L.H.,Zhang, T.J.,Tee, K.C. (1999). Laser-induced formation of titanium silicides. Surface and Interface Analysis 28 (1) : 200-203. ScholarBank@NUS Repository.;2-2
Abstract: In this article, we report on the laser-induced formation of both C49 and C54 TiSi2 films with fine grains using Q-switched Nd:YAG laser irradiation from Ti/Si samples. The films formed were characterized with micro-Raman spectroscopy, high-resolution transmission electron microscopy, energy-dispersive spectrometry and atomic force microscopy. The TiSi2 films synthesized are single-phased and thin, with fine grains and a smooth film/substrate interface on the atomic scale. The process is likely to proceed via a solid-state reaction rather than liquid-phase intermixing. Our results demonstrate the unique advantages of a laser annealing technique and its potential in deep submicron semiconductor technology.
Source Title: Surface and Interface Analysis
ISSN: 01422421
DOI: 10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-2
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

checked on Jun 8, 2021

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.