Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/96893
Title: In situ reflection high-energy electron diffraction observation of epitaxial LaNiO3 thin films
Authors: Chen, P. 
Xu, S.Y. 
Zhou, W.Z.
Ong, C.K. 
Cui, D.F.
Issue Date: 1999
Citation: Chen, P.,Xu, S.Y.,Zhou, W.Z.,Ong, C.K.,Cui, D.F. (1999). In situ reflection high-energy electron diffraction observation of epitaxial LaNiO3 thin films. Journal of Applied Physics 85 (5) : 3000-3002. ScholarBank@NUS Repository.
Abstract: Epitaxial LaNiO3 (LNO) thin films were grown on (001) SrTiO3 substrates by laser molecular-beam epitaxy. The growth process of the LNO films was monitored by in situ reflection high-energy electron diffraction (RHEED). Clear RHEED patterns and the intensity oscillation of RHEED were observed during the epitaxial growth process. The morphology of the films was studied by atomic force microscopy. The results show that the films grown by this method have a nanoscale smooth surface with the root-mean-square surface roughness smaller than 7 nm on an area of 1 × 1 μm2. X-ray diffraction patterns indicate that the crystalline LNO films exhibited preferred (00ℓ) orientation. The resistivity of the thin film is 0.28 mΩ cm at 278 K and 0.06 mΩ cm at 80 K, respectively. © 1999 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/96893
ISSN: 00218979
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

98
checked on May 12, 2022

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.