Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2995856
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dc.titleImpact of self-assembled monolayer on low frequency noise of organic thin film transistors
dc.contributor.authorKe, L.
dc.contributor.authorDolmanan, S.B.
dc.contributor.authorShen, L.
dc.contributor.authorVijila, C.
dc.contributor.authorChua, S.J.
dc.contributor.authorPng, R.-Q.
dc.contributor.authorChia, P.-J.
dc.contributor.authorChua, L.-L.
dc.contributor.authorHo, P.K.-H.
dc.date.accessioned2014-10-16T09:28:36Z
dc.date.available2014-10-16T09:28:36Z
dc.date.issued2008
dc.identifier.citationKe, L., Dolmanan, S.B., Shen, L., Vijila, C., Chua, S.J., Png, R.-Q., Chia, P.-J., Chua, L.-L., Ho, P.K.-H. (2008). Impact of self-assembled monolayer on low frequency noise of organic thin film transistors. Applied Physics Letters 93 (15) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2995856
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96875
dc.description.abstractBottom-contact organic field-effect transistors (FETs) based on regioregular poly(3-hexylthiophene) were fabricated with different surface treatments and were evaluated using a low frequency noise (LFN) spectroscopy. The oxygen-plasma (OP) treated device shows the highest mobility with the lowest current fluctuation. Octadecyltrichlorosilane and perfluorodecyldimetylchlorosilane treated device gives a higher noise compared with the OP treated device. Hexamethyldisilazane treated devices show the highest noise but the lowest mobility. The LFN results are correlated with organic FET device mobility and stability, proved by channel material crystallinity and degree of dislocations analysis. LFN measurement provides a nondisruptive and direct methodology to characterize device performance. © 2008 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2995856
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.2995856
dc.description.sourcetitleApplied Physics Letters
dc.description.volume93
dc.description.issue15
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000260125100103
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