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Title: Impact of self-assembled monolayer on low frequency noise of organic thin film transistors
Authors: Ke, L.
Dolmanan, S.B.
Shen, L.
Vijila, C.
Chua, S.J.
Png, R.-Q. 
Chia, P.-J. 
Chua, L.-L. 
Ho, P.K.-H. 
Issue Date: 2008
Citation: Ke, L., Dolmanan, S.B., Shen, L., Vijila, C., Chua, S.J., Png, R.-Q., Chia, P.-J., Chua, L.-L., Ho, P.K.-H. (2008). Impact of self-assembled monolayer on low frequency noise of organic thin film transistors. Applied Physics Letters 93 (15) : -. ScholarBank@NUS Repository.
Abstract: Bottom-contact organic field-effect transistors (FETs) based on regioregular poly(3-hexylthiophene) were fabricated with different surface treatments and were evaluated using a low frequency noise (LFN) spectroscopy. The oxygen-plasma (OP) treated device shows the highest mobility with the lowest current fluctuation. Octadecyltrichlorosilane and perfluorodecyldimetylchlorosilane treated device gives a higher noise compared with the OP treated device. Hexamethyldisilazane treated devices show the highest noise but the lowest mobility. The LFN results are correlated with organic FET device mobility and stability, proved by channel material crystallinity and degree of dislocations analysis. LFN measurement provides a nondisruptive and direct methodology to characterize device performance. © 2008 American Institute of Physics.
Source Title: Applied Physics Letters
ISSN: 00036951
DOI: 10.1063/1.2995856
Appears in Collections:Staff Publications

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