Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.nimb.2007.11.022
DC FieldValue
dc.titleHRBS/channeling studies of ultra-thin ITO films on Si
dc.contributor.authorMalar, P.
dc.contributor.authorChan, T.K.
dc.contributor.authorHo, C.S.
dc.contributor.authorOsipowicz, T.
dc.date.accessioned2014-10-16T09:28:08Z
dc.date.available2014-10-16T09:28:08Z
dc.date.issued2008-04
dc.identifier.citationMalar, P., Chan, T.K., Ho, C.S., Osipowicz, T. (2008-04). HRBS/channeling studies of ultra-thin ITO films on Si. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 266 (8) : 1464-1467. ScholarBank@NUS Repository. https://doi.org/10.1016/j.nimb.2007.11.022
dc.identifier.issn0168583X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96839
dc.description.abstractHigh-resolution Rutherford backscattering spectroscopy (HRBS)/channeling techniques have been utilized for a detailed characterization of ultra-thin indium tin oxide (ITO) films and to probe the nature of the interface between the ITO film and the Si(0 0 1) substrate. Channeling studies provide a direct measure of the lattice strain distribution in the crystalline Si substrate in the case of amorphous over layers. The measurements on DC magnetron sputtered ITO films have been carried out using the recently installed HRBS facility at the Centre for Ion Beam Applications (CIBA). The thickness of the ultra-thin (∼9.8 nm) ITO films was calculated from the HRBS spectra having an energy resolution of about 1.4 keV at the superimposed leading (In + Sn) edge of the ITO film. The films were near stoichiometric and the interface between ITO film and Si was found to include a thin SiOx transition layer. The backscattering yields from (In + Sn) of ITO were equal in random and channeling directions, thereby revealing the non-crystalline nature of the film. Angular scans of HRBS spectra around the off-normal [1 1 1] axis clearly showed a shift in the channeling minimum indicative of compressive strain of the Si lattice at the SiOx/Si interface. The observed strain was about 0.8% near the interface and decreased to values below our detection limits at a depth of ∼3 nm from the SiOx/Si interface. © 2007 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.nimb.2007.11.022
dc.sourceScopus
dc.subjectHigh-resolution RBS
dc.subjectInterfacial strain
dc.subjectIon channeling
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1016/j.nimb.2007.11.022
dc.description.sourcetitleNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
dc.description.volume266
dc.description.issue8
dc.description.page1464-1467
dc.description.codenNIMBE
dc.identifier.isiut000256677600067
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