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https://doi.org/10.1021/jp205020r
DC Field | Value | |
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dc.title | Highly ordered monolayer, multilayer, and hybrid films of graphene oxide obtained by the bubble deposition method | |
dc.contributor.author | Azevedo, J. | |
dc.contributor.author | Costa-Coquelard, C. | |
dc.contributor.author | Jegou, P. | |
dc.contributor.author | Yu, T. | |
dc.contributor.author | Benattar, J.-J. | |
dc.date.accessioned | 2014-10-16T09:27:48Z | |
dc.date.available | 2014-10-16T09:27:48Z | |
dc.date.issued | 2011-08-04 | |
dc.identifier.citation | Azevedo, J., Costa-Coquelard, C., Jegou, P., Yu, T., Benattar, J.-J. (2011-08-04). Highly ordered monolayer, multilayer, and hybrid films of graphene oxide obtained by the bubble deposition method. Journal of Physical Chemistry C 115 (30) : 14678-14681. ScholarBank@NUS Repository. https://doi.org/10.1021/jp205020r | |
dc.identifier.issn | 19327447 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/96807 | |
dc.description.abstract | Graphene oxide (GO) is a promising candidate for many applications ranging from electronics to sensors. The properties of graphene-based materials not only are dependent on the quality of the sheets but are largely influenced by the way they are assembled. Many techniques have traditionally been used to form GO films, but each of them presents some drawbacks. Herein, we report the use of the original bubble deposition method (BDM) as a simple and powerful method to precisely order and deposit GO films on arbitrary substrates. The intrinsic drainage parameter can be simply adjusted to deposit monolayer films from quasi-isolated flakes to high surface coverage. The flexibility of this method allows the formation of thickness-controlled GO films with negligible interlayer spacing, as well as hybrid materials made of GO sheets and carbon nanotubes. © 2011 American Chemical Society. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1021/jp205020r | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.description.doi | 10.1021/jp205020r | |
dc.description.sourcetitle | Journal of Physical Chemistry C | |
dc.description.volume | 115 | |
dc.description.issue | 30 | |
dc.description.page | 14678-14681 | |
dc.identifier.isiut | 000293192100031 | |
Appears in Collections: | Staff Publications |
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