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https://doi.org/10.1063/1.4769443
DC Field | Value | |
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dc.title | High thermoelectric figure of merit in silicon-germanium superlattice structured nanowires | |
dc.contributor.author | Shi, L. | |
dc.contributor.author | Jiang, J. | |
dc.contributor.author | Zhang, G. | |
dc.contributor.author | Li, B. | |
dc.date.accessioned | 2014-10-16T09:27:39Z | |
dc.date.available | 2014-10-16T09:27:39Z | |
dc.date.issued | 2012-12-03 | |
dc.identifier.citation | Shi, L., Jiang, J., Zhang, G., Li, B. (2012-12-03). High thermoelectric figure of merit in silicon-germanium superlattice structured nanowires. Applied Physics Letters 101 (23) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4769443 | |
dc.identifier.issn | 00036951 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/96798 | |
dc.description.abstract | By using a combination of the first-principles density functional theory and nonequilibrium Greens function for electron and phonon transport, we investigate the thermoelectric properties of silicon-germanium superlattice nanowires (NWs). Our results show that introducing superlattice structures always increases thermoelectric figure of merit, ZT, which depends on the periodic length of the superlattice NWs. For n-type superlattice NWs, the achievable maximum ZT is 4.7, which is 5-fold increase as compared to the equivalent pristine silicon NWs. For p-type wires, the achieved maximum ZT is 2.74, which is 4.6-fold increase as compared to the pristine silicon NWs. © 2012 American Institute of Physics. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4769443 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.description.doi | 10.1063/1.4769443 | |
dc.description.sourcetitle | Applied Physics Letters | |
dc.description.volume | 101 | |
dc.description.issue | 23 | |
dc.description.page | - | |
dc.description.coden | APPLA | |
dc.identifier.isiut | 000312243900072 | |
Appears in Collections: | Staff Publications |
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