Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4769443
DC FieldValue
dc.titleHigh thermoelectric figure of merit in silicon-germanium superlattice structured nanowires
dc.contributor.authorShi, L.
dc.contributor.authorJiang, J.
dc.contributor.authorZhang, G.
dc.contributor.authorLi, B.
dc.date.accessioned2014-10-16T09:27:39Z
dc.date.available2014-10-16T09:27:39Z
dc.date.issued2012-12-03
dc.identifier.citationShi, L., Jiang, J., Zhang, G., Li, B. (2012-12-03). High thermoelectric figure of merit in silicon-germanium superlattice structured nanowires. Applied Physics Letters 101 (23) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4769443
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96798
dc.description.abstractBy using a combination of the first-principles density functional theory and nonequilibrium Greens function for electron and phonon transport, we investigate the thermoelectric properties of silicon-germanium superlattice nanowires (NWs). Our results show that introducing superlattice structures always increases thermoelectric figure of merit, ZT, which depends on the periodic length of the superlattice NWs. For n-type superlattice NWs, the achievable maximum ZT is 4.7, which is 5-fold increase as compared to the equivalent pristine silicon NWs. For p-type wires, the achieved maximum ZT is 2.74, which is 4.6-fold increase as compared to the pristine silicon NWs. © 2012 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4769443
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.4769443
dc.description.sourcetitleApplied Physics Letters
dc.description.volume101
dc.description.issue23
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000312243900072
Appears in Collections:Staff Publications

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