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|Title:||High thermoelectric figure of merit in silicon-germanium superlattice structured nanowires||Authors:||Shi, L.
|Issue Date:||3-Dec-2012||Citation:||Shi, L., Jiang, J., Zhang, G., Li, B. (2012-12-03). High thermoelectric figure of merit in silicon-germanium superlattice structured nanowires. Applied Physics Letters 101 (23) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4769443||Abstract:||By using a combination of the first-principles density functional theory and nonequilibrium Greens function for electron and phonon transport, we investigate the thermoelectric properties of silicon-germanium superlattice nanowires (NWs). Our results show that introducing superlattice structures always increases thermoelectric figure of merit, ZT, which depends on the periodic length of the superlattice NWs. For n-type superlattice NWs, the achievable maximum ZT is 4.7, which is 5-fold increase as compared to the equivalent pristine silicon NWs. For p-type wires, the achieved maximum ZT is 2.74, which is 4.6-fold increase as compared to the pristine silicon NWs. © 2012 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/96798||ISSN:||00036951||DOI:||10.1063/1.4769443|
|Appears in Collections:||Staff Publications|
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