Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/96756
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dc.titleGrowth of carbon nitride thin films by radio-frequency-plasma-enhanced chemical vapor deposition at low temperatures
dc.contributor.authorLim, S.F.
dc.contributor.authorWee, A.T.S.
dc.contributor.authorLin, J.
dc.contributor.authorChua, D.H.C.
dc.contributor.authorTan, K.L.
dc.date.accessioned2014-10-16T09:27:10Z
dc.date.available2014-10-16T09:27:10Z
dc.date.issued1999-03
dc.identifier.citationLim, S.F.,Wee, A.T.S.,Lin, J.,Chua, D.H.C.,Tan, K.L. (1999-03). Growth of carbon nitride thin films by radio-frequency-plasma-enhanced chemical vapor deposition at low temperatures. Journal of Materials Research 14 (3) : 1153-1159. ScholarBank@NUS Repository.
dc.identifier.issn08842914
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96756
dc.description.abstractIn this paper, we report our findings in the deposition of carbon nitride by radio-frequency - plasma-enhanced chemical vapor deposition (RF-PECVD) at temperatures slightly above room temperature (RT) and pressures of 800 mTorr using NH3 and C2H4 as source gases. The variation of the NH3/C2H4 source gas ratio and rf power is shown to affect the N/C ratio and sp3/sp2 ratio in a reproducible manner. An N/C ratio as high as 1.17 has been obtained under optimized growth conditions of NH3/C2H4 ratio of 7.3 and rf power of 90 W. X-ray diffraction (XRD) indicates the presence of microcrystalline carbon nitride in an amorphous CNx matrix with preferred orientation along the (100) direction. X-ray photoelectron microscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) studies show that our assignment of the XPS peaks and FTIR absorption bands are mutually consistent and in good agreement with published data. Both methods of analysis show the increase in the sp3 component with increase in N incorporation in the film.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.sourcetitleJournal of Materials Research
dc.description.volume14
dc.description.issue3
dc.description.page1153-1159
dc.description.codenJMREE
dc.identifier.isiutNOT_IN_WOS
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