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|Title:||Graphene oxide gate dielectric for graphene-based monolithic field effect transistors||Authors:||Eda, G.
|Issue Date:||1-Apr-2013||Citation:||Eda, G., Nathan, A., Wöbkenberg, P., Colleaux, F., Ghaffarzadeh, K., Anthopoulos, T.D., Chhowalla, M. (2013-04-01). Graphene oxide gate dielectric for graphene-based monolithic field effect transistors. Applied Physics Letters 102 (13) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4799970||Abstract:||We report unique electrical anisotropy and dielectric properties of graphene oxide (GO) thin films, which allow facile implementation of GO-based monolithic field effect transistors (FETs). We demonstrate that exposure of GO films to hydrogen plasma leads to self-limiting reduction of only the uppermost layers such that a semiconductor-on-insulator type heterostructure is realized. In such heterostructures, the reduced uppermost layers and the unmodified bulk GO layers serve as the channel and gate dielectric components, respectively, of a thin film FET. © 2013 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/96737||ISSN:||00036951||DOI:||10.1063/1.4799970|
|Appears in Collections:||Staff Publications|
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