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|Title:||Flexible graphene-PZT ferroelectric nonvolatile memory||Authors:||Lee, W.
|Issue Date:||29-Nov-2013||Citation:||Lee, W., Kahya, O., Toh, C.T., Özyilmaz, B., Ahn, J.-H. (2013-11-29). Flexible graphene-PZT ferroelectric nonvolatile memory. Nanotechnology 24 (47) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0957-4484/24/47/475202||Abstract:||We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr0.35,Ti0.65)O3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol-gel methods, respectively. Such PZT films show a high remnant polarization (Pr) of 30 μC cm -2 and a coercive voltage (Vc) of 3.5 V under a voltage loop over ±11 V. The graphene-PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits. © 2013 IOP Publishing Ltd.||Source Title:||Nanotechnology||URI:||http://scholarbank.nus.edu.sg/handle/10635/96659||ISSN:||09574484||DOI:||10.1088/0957-4484/24/47/475202|
|Appears in Collections:||Staff Publications|
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