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https://doi.org/10.1088/0957-4484/24/47/475202
Title: | Flexible graphene-PZT ferroelectric nonvolatile memory | Authors: | Lee, W. Kahya, O. Toh, C.T. Özyilmaz, B. Ahn, J.-H. |
Issue Date: | 29-Nov-2013 | Citation: | Lee, W., Kahya, O., Toh, C.T., Özyilmaz, B., Ahn, J.-H. (2013-11-29). Flexible graphene-PZT ferroelectric nonvolatile memory. Nanotechnology 24 (47) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0957-4484/24/47/475202 | Abstract: | We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr0.35,Ti0.65)O3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol-gel methods, respectively. Such PZT films show a high remnant polarization (Pr) of 30 μC cm -2 and a coercive voltage (Vc) of 3.5 V under a voltage loop over ±11 V. The graphene-PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits. © 2013 IOP Publishing Ltd. | Source Title: | Nanotechnology | URI: | http://scholarbank.nus.edu.sg/handle/10635/96659 | ISSN: | 09574484 | DOI: | 10.1088/0957-4484/24/47/475202 |
Appears in Collections: | Staff Publications |
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