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Title: Flexible graphene-PZT ferroelectric nonvolatile memory
Authors: Lee, W.
Kahya, O.
Toh, C.T. 
Özyilmaz, B. 
Ahn, J.-H.
Issue Date: 29-Nov-2013
Citation: Lee, W., Kahya, O., Toh, C.T., Özyilmaz, B., Ahn, J.-H. (2013-11-29). Flexible graphene-PZT ferroelectric nonvolatile memory. Nanotechnology 24 (47) : -. ScholarBank@NUS Repository.
Abstract: We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr0.35,Ti0.65)O3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol-gel methods, respectively. Such PZT films show a high remnant polarization (Pr) of 30 μC cm -2 and a coercive voltage (Vc) of 3.5 V under a voltage loop over ±11 V. The graphene-PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits. © 2013 IOP Publishing Ltd.
Source Title: Nanotechnology
ISSN: 09574484
DOI: 10.1088/0957-4484/24/47/475202
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