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Please use this identifier to cite or link to this item: https://doi.org/10.1088/0022-3727/44/40/405302
DC FieldValue
dc.titleFirst-principles study of NiSi2/HfO2 interfaces: Energetics and Schottky-barrier heights
dc.contributor.authorWong, T.I.
dc.contributor.authorYang, M.
dc.contributor.authorFeng, Y.P.
dc.contributor.authorChi, D.Z.
dc.contributor.authorWang, S.J.
dc.date.accessioned2014-10-16T09:25:56Z
dc.date.available2014-10-16T09:25:56Z
dc.date.issued2011
dc.identifier.citationWong, T.I., Yang, M., Feng, Y.P., Chi, D.Z., Wang, S.J. (2011). First-principles study of NiSi2/HfO2 interfaces: Energetics and Schottky-barrier heights. Journal of Physics D: Applied Physics 44 (40) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0022-3727/44/40/405302
dc.identifier.issn00223727
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96653
dc.description.abstractThe interface energetics and the Schottky-barrier heights (SBHs) of NiSi2/HfO2 gate stacks are investigated within the framework of first-principles calculations. It was found that the SBHs are interface structure dependent and vary with abrupt interfacial bonds. Based on the calculated interface formation energies of seven interface structures for two different chemical environments and the calculated SBHs, we propose adjusting hafnium or oxygen chemical potential together with silicon rich surface as an effective method to tune the barrier heights. © 2011 IOP Publishing Ltd.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1088/0022-3727/44/40/405302
dc.description.sourcetitleJournal of Physics D: Applied Physics
dc.description.volume44
dc.description.issue40
dc.description.page-
dc.description.codenJPAPB
dc.identifier.isiut000295164100011
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