Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2189204
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dc.titleFirst principles study on the interface of CrSbGaSb heterojunction
dc.contributor.authorWu, R.Q.
dc.contributor.authorLiu, L.
dc.contributor.authorPeng, G.W.
dc.contributor.authorFeng, Y.P.
dc.date.accessioned2014-10-16T09:25:50Z
dc.date.available2014-10-16T09:25:50Z
dc.date.issued2006-05-01
dc.identifier.citationWu, R.Q., Liu, L., Peng, G.W., Feng, Y.P. (2006-05-01). First principles study on the interface of CrSbGaSb heterojunction. Journal of Applied Physics 99 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2189204
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96644
dc.description.abstractFirst principles calculations based on spin density functional theory are performed to study the energy alignment and magnetic properties of zinc-blende CrSbGaSb heterojunction. Our results suggest that at the interface CrSb remains half metallic. The Schottky barrier height of n -type GaSb is estimated to be 0.89 eV with the Fermi level lying below the conduction band minimum (CBM) of GaSb. The CBM of the minority spin lies just above that of GaSb, suggesting that the majority spin can be injected into GaSb without being flipped to the conduction bands of the minority spin. Thus the CrSbGaSb heterojunction can be potentially useful in the field of spintronics. © 2006 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2189204
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.2189204
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume99
dc.description.issue9
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000237682900045
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