Please use this identifier to cite or link to this item: https://doi.org/10.1364/OE.20.011574
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dc.titleFirst principles study of Bismuth alloying effects in GaAs saturable absorber
dc.contributor.authorLi, D.
dc.contributor.authorYang, M.
dc.contributor.authorZhao, S.
dc.contributor.authorCai, Y.
dc.contributor.authorFeng, Y.
dc.date.accessioned2014-10-16T09:25:49Z
dc.date.available2014-10-16T09:25:49Z
dc.date.issued2012-05-07
dc.identifier.citationLi, D., Yang, M., Zhao, S., Cai, Y., Feng, Y. (2012-05-07). First principles study of Bismuth alloying effects in GaAs saturable absorber. Optics Express 20 (10) : 11574-11580. ScholarBank@NUS Repository. https://doi.org/10.1364/OE.20.011574
dc.identifier.issn10944087
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96642
dc.description.abstractFirst principles hybrid functional calculations have been carried out to study electronic properties of GaAs with Bi alloying effects. It is found that the doping of Bi into GaAs reduces the bandgap due to the intraband level repulsions between Bi induced states and host states, and the Bi-related impurity states originate from the hybridization of Bi-6p and its nearest As-4p orbitals. With the increase of Bi concentration in GaAs, the bandgap decreases monotonously. The calculated optical properties of the undoped and Bi-doped GaAs are similar except the shift toward lower energy of absorption edge and main absorption peaks with Bi doping. These results suggest a promising application of GaBixAs1-x alloy as semiconductor saturable absorber in Q-switched or mode-locked laser. © 2012 Optical Society of America.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1364/OE.20.011574
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1364/OE.20.011574
dc.description.sourcetitleOptics Express
dc.description.volume20
dc.description.issue10
dc.description.page11574-11580
dc.identifier.isiut000303879700116
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