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|Title:||Field dependence of the overshoot phenomena in InP||Authors:||Oh, K.H.
|Keywords:||Hot electron transport
|Issue Date:||Apr-1992||Citation:||Oh, K.H.,Ong, C.K.,Tan, B.T.G. (1992-04). Field dependence of the overshoot phenomena in InP. Journal of Physics and Chemistry of Solids 53 (4) : 555-559. ScholarBank@NUS Repository.||Abstract:||The Ensemble Monte Carlo method has been used to investigate the velocity overshoot effect in InP, for applied fields greater than 10 kV cm-1. We confirmed that the effect that occurs in InP is caused by the rapid transfer of charge carriers from a high mobility Γ-valley to a low mobility L-valley. Detailed comparison with the results obtained for GaAs by Xing Zhen [Ensemble Monte Carlo modeling of high-field transport and ultra-fast phenomena in compound semiconductors, Thesis (1990)] has also been made and commented on. © 1992.||Source Title:||Journal of Physics and Chemistry of Solids||URI:||http://scholarbank.nus.edu.sg/handle/10635/96628||ISSN:||00223697|
|Appears in Collections:||Staff Publications|
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