Please use this identifier to cite or link to this item:
Title: Field dependence of the overshoot phenomena in InP
Authors: Oh, K.H. 
Ong, C.K. 
Tan, B.T.G. 
Keywords: Hot electron transport
Issue Date: Apr-1992
Citation: Oh, K.H.,Ong, C.K.,Tan, B.T.G. (1992-04). Field dependence of the overshoot phenomena in InP. Journal of Physics and Chemistry of Solids 53 (4) : 555-559. ScholarBank@NUS Repository.
Abstract: The Ensemble Monte Carlo method has been used to investigate the velocity overshoot effect in InP, for applied fields greater than 10 kV cm-1. We confirmed that the effect that occurs in InP is caused by the rapid transfer of charge carriers from a high mobility Γ-valley to a low mobility L-valley. Detailed comparison with the results obtained for GaAs by Xing Zhen [Ensemble Monte Carlo modeling of high-field transport and ultra-fast phenomena in compound semiconductors, Thesis (1990)] has also been made and commented on. © 1992.
Source Title: Journal of Physics and Chemistry of Solids
ISSN: 00223697
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

checked on Mar 29, 2020

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.