Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/96530
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dc.titleEvolution and ordering of multilayer Ge quantum dots on Si(001)
dc.contributor.authorJeyanthinath, M.
dc.contributor.authorXu, M.J.
dc.contributor.authorWang, X.-S.
dc.date.accessioned2014-10-16T09:24:30Z
dc.date.available2014-10-16T09:24:30Z
dc.date.issued2004-08
dc.identifier.citationJeyanthinath, M.,Xu, M.J.,Wang, X.-S. (2004-08). Evolution and ordering of multilayer Ge quantum dots on Si(001). International Journal of Nanoscience 3 (4-5) : 579-587. ScholarBank@NUS Repository.
dc.identifier.issn0219581X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96530
dc.description.abstractEvolution and ordering of multilayer Ge islands (up to 14 layers) on Si(001), prepared by physical vapor deposition at about 550°C; were studied using Scanning Tunneling Microscope (STM). In the growth process, it was observed that long huts split during the deposition of Si buffer layer. It can be explained as a consequence of strain due to lattice mismatch and intermixing of Si and Ge to form solid solution. Such a mechanism of splitting could lead the dots to order and uniformity in the subsequent layers. Apart from splitting of huts, the surface corrugation of Si spacer layer influences the nucleation of Ge islands in the next layer.
dc.sourceScopus
dc.subjectGermanium
dc.subjectQuantum dots
dc.subjectScanning tunneling microscopy
dc.subjectSelf-assembly
dc.subjectSilicon
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.sourcetitleInternational Journal of Nanoscience
dc.description.volume3
dc.description.issue4-5
dc.description.page579-587
dc.identifier.isiutNOT_IN_WOS
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