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|Title:||Evaluation of back-side secondary ion mass spectrometry for boron diffusion in silicon and silicon-on-insulator substrates||Authors:||Yeo, K.L.
|Issue Date:||1-Oct-2004||Citation:||Yeo, K.L., Wee, A.T.S., Chong, Y.F. (2004-10-01). Evaluation of back-side secondary ion mass spectrometry for boron diffusion in silicon and silicon-on-insulator substrates. Journal of Applied Physics 96 (7) : 3692-3695. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1782959||Abstract:||The redistribution of boron in (100) crystalline silicon and silicon-on-insulator (SOI) substrates after rapid thermal annealing (RTP) was studied. An accurate diffusion profile was obtained by using SOI back-side secondary ion mass spectrometry (SIMS) technique. The transformation of the amorphous layer from the dose implant into silicon boride phase during annealing is responsible for the boron-enhanced diffusion (BED). It is observed that the boron diffusion profiles do not deviate in any of the two types of substrates after RTP with a soak time of 30 sec.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/96526||ISSN:||00218979||DOI:||10.1063/1.1782959|
|Appears in Collections:||Staff Publications|
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